Characterization of Impurity Doping and Stress in Si/Ge and Ge/Si Core–Shell Nanowires-Reference-Cited by-同舟云学术

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Characterization of Impurity Doping and Stress in Si/Ge and Ge/Si Core–Shell Nanowires

Published:2012-09-07 Issue:10 Volume:6 Page:8887-8895
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Fukata Naoki¹,Mitome Masanori¹,Sekiguchi Takashi¹,Bando Yoshio¹,Kirkham Melanie²,Hong Jung-Il²³,Wang Zhong Lin¹²,Snyder Robert L.²

Affiliation:

1. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

2. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States

3. Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn302881w

Reference50 articles.

1. Nanowire electronic and optoelectronic devices

2. Nanowire-based one-dimensional electronics

3. Nanowire photonics

4. Semiconductor Nanowires: From Self-Organization to Patterned Growth

5. Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire Arrays

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