Room-Temperature MOCVD of Sb2Te3 Films and Solution Precipitation of M2Te3(M = Sb, Bi) Powders via a Novel N,N-Dimethylaminotrimethylsilane Elimination Reaction-Reference-Cited by-同舟云学术

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Room-Temperature MOCVD of Sb2Te3 Films and Solution Precipitation of M2Te3(M = Sb, Bi) Powders via a Novel N,N-Dimethylaminotrimethylsilane Elimination Reaction

Published:1994-06-01 Issue:6 Volume:6 Page:727-729
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Groshens Thomas J.,Gedridge Robert. W. Jr.,Lowe-Ma Charlotte K.

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm00042a005

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD;RSC Advances;2020

2. Facile synthesis and thermal analysis of antimony telluride nanostructures;Materials Today: Proceedings;2018

3. Neodymium doped bismuth telluride alloys using chemical reflux method for thermoelectric application;Integrated Ferroelectrics;2017-10-13

4. Bismuth amides as promising ALD precursors for Bi 2 Te 3 films;Journal of Crystal Growth;2017-07

5. Synthesis of Bi2Te3and (BixSb1−x)2Te3nanoparticles using the novel IL [C4mim]3[Bi3I12];Dalton Transactions;2016

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