DFT Modeling of Chemical Vapor Deposition of GaN from Organogallium Precursors. 1. Thermodynamics of Elimination Reactions
Author:
Affiliation:
1. Inorganic Chemistry Group, Department of Chemistry, St. Petersburg State University, University Pr. 2, Old Peterhof, 198904, Russia
2. Center for Computational Quantum Chemistry, University of Georgia, Athens, Georgia 30602
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp002379h
Reference95 articles.
1. Growth of Group III Nitrides. A Review of Precursors and Techniques
2. Organometallic precursors for the formation of GaN by metal-organic chemical vapour deposition: a study of [(CH3)2GaNH2]3
3. Crystal Engineering Using the Unconventional Hydrogen Bond. Synthesis, Structure, and Theoretical Investigation of Cyclotrigallazane
4. New Single-Source Precursor Approach to Gallium Nitride
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