Lateral Graphene–hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors
Author:
Affiliation:
1. Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via G. Caruso 16, 56122 Pisa, Italy,
2. IEIIT-CNR
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/nn300019b
Reference14 articles.
1. A Graphene Field-Effect Device
2. Carbon-based electronics
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4. Simulation of Graphene Nanoribbon Field-Effect Transistors
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