Current Saturation in Submicrometer Graphene Transistors with Thin Gate Dielectric: Experiment, Simulation, and Theory
Author:
Affiliation:
1. IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States,
2. IBM Austin Research Laboratories, Austin, Texas 78758, United States
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/nn300978c
Reference22 articles.
1. Intrinsic and extrinsic performance limits of graphene devices on SiO2
2. The electronic properties of graphene
3. Graphene: Status and Prospects
4. Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp2-on-sp3 Technology
5. High-frequency, scaled graphene transistors on diamond-like carbon
Cited by 47 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Graphene Devices for Aerial Wireless Communications at THz;Journal of Physics: Conference Series;2024-03-01
2. Analysis of a Graphene FET-Based Frequency Doubler for Combined Sensing and Modulation through Compact Model Simulation;Electronics;2024-02-15
3. Biomass-derived graphene and nanostructured carbons: A review for electrochemical applications;Journal of Non-Crystalline Solids;2024-02
4. Probing charge traps at the 2D semiconductor/dielectric interface;Nanoscale;2023
5. Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors;Nanomaterials;2021-11-19
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3