Boron-Doped Graphene: Scalable and Tunable p-Type Carrier Concentration Doping-Reference-Cited by-同舟云学术

Boron-Doped Graphene: Scalable and Tunable p-Type Carrier Concentration Doping

Published:2013-10-18 Issue:44 Volume:117 Page:23251-23257
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Wang Lu¹,Sofer Zdeněk²,Šimek Petr²,Tomandl Ivo³,Pumera Martin¹

Affiliation:

1. Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore

2. Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, 166 28 Prague 6, Czech Republic

3. Nuclear Physics Institute of the ASCR, v.v.i. , Řež 130, 250 68 Rež, Czech Republic

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp405169j

Reference26 articles.

1. Graphene: The New Two-Dimensional Nanomaterial

2. Doped Graphene Sheets As Anode Materials with Superhigh Rate and Large Capacity for Lithium Ion Batteries

3. Large-Scale Growth and Characterizations of Nitrogen-Doped Monolayer Graphene Sheets

4. Synthesis Of Nitrogen-Doped Graphene Films For Lithium Battery Application

5. Epitaxial Graphene on 4H-SiC(0001) Grown under Nitrogen Flux: Evidence of Low Nitrogen Doping and High Charge Transfer

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