Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition of a-SiCN:H Films: Role of Precursors on the Film Growth and Properties-Reference-Cited by-同舟云学术

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Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition of a-SiCN:H Films: Role of Precursors on the Film Growth and Properties

Published:2012-09-28 Issue:10 Volume:4 Page:5293-5299
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Guruvenket Srinivasan¹,Andrie Steven²,Simon Mark²,Johnson Kyle W.²,Sailer Robert A.¹

Affiliation:

1. Center for Nanoscale Science and Engineering, North Dakota State University, Research Park Drive, Fargo, North Dakota 58102, United States

2. Department of Mechanical Engineering, North Dakota State University, 111 Dolve Hall, Fargo, North Dakota 58102, United States

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am301157p

Reference37 articles.

1. Fluorination of polymethylmethaacrylate with tetrafluoroethane using DC glow discharge plasma

2. Structural, mechanical, tribological, and corrosion properties of a-SiC:H coatings prepared by PECVD

3. Introduction to Surface Engineering and Functionally Engineered Materials

4. Status and potential of atmospheric plasma processing of materials

5. Use of atmospheric pressure plasma to confer durable water repellent functionality and antimicrobial functionality on cotton/polyester blend

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