Transition from Hopping to Band-like Transport in Weakly Coupled Multilayer MoS2 Field Effect Transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Transition from Hopping to Band-like Transport in Weakly Coupled Multilayer MoS2 Field Effect Transistors

Published:2020-03-13 Issue:4 Volume:2 Page:971-979
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Huang Kailiang¹²,Zhao Miao¹²,Sun Bing¹²,Liu Xueyuan¹²,Liu Jianhua¹²,Chang Hudong¹²,Zeng Yuping³,Liu Honggang¹²^ORCID

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, United States

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Key Laboratory of Microelectronics Devices and Integrated Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00046

Reference64 articles.

1. Electronic structure of a single MoS2 monolayer

2. Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

3. Single-layer MoS2 transistors

4. High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors

5. Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of ultrafast electrons in pendant-embedded conducting two-dimensional polymers;Chem;2024-04

2. Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS2 Memristive Devices;Materials;2024-03-15

3. Physical vapor deposition-free scalable high-efficiency electrical contacts to MoS₂;Nanotechnology;2023-12-27

4. Building hybrid structure of monolayered S-depleted Mo–S nanocrystals and 3D graphene towards promising aqueous supercapacitor applications;Nanotechnology;2023-10-30

5. Single‐Gate In‐Transistor Readout of Current Superposition and Collapse Utilizing Quantum Tunneling and Ferroelectric Switching;Advanced Materials;2023-07-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3