Ultralow Power Consumption and Large Dynamic Range Synaptic Transistor Based on α-In2Se3 Nanosheets
Author:
Affiliation:
1. Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics, Peking University, Beijing 100871, China
2. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Funder
Ministry of Science and Technology of the People's Republic of China
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00970
Reference65 articles.
1. Can programming be liberated from the von Neumann style?
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5. Nanoscale Memristor Device as Synapse in Neuromorphic Systems
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