Uniform Crystal Formation and Electrical Variability Reduction in Hafnium-Oxide-Based Ferroelectric Memory by Thermal Engineering
Author:
Affiliation:
1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan City 701, Taiwan, R.O.C.
2. Taiwan Semiconductor Research Institute, Hsinchu City 300, Taiwan, R.O.C.
Funder
Ministry of Science and Technology, Taiwan
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00610
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4. HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
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