Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4-Reference-Cited by-同舟云学术

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Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4

Published:2021-10-26 Issue:11 Volume:3 Page:4768-4773
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Boyko Teak D.¹^ORCID,Zerr Andreas²,Moewes Alexander³^ORCID

Affiliation:

1. Canadian Light Source, University of Saskatchewan, Saskatoon S7N 2V3, Saskatchewan, Canada

2. LSPM, CNRS-UPR 3407, Université Sorbonne Paris Nord, Villetaneuse 93430, France

3. Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon S7N 2V3, Saskatchewan, Canada

Funder

Canada Foundation for Innovation

Canada Research Chairs

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00632

Reference29 articles.

1. Recent Advances in New Hard High-Pressure Nitrides

2. Hafnium Nitride with Thorium Phosphide Structure: Physical Properties and an Assessment of the Hf-N, Zr-N, and Ti-N Phase Diagrams at High Pressures and Temperatures

3. CubicHf3N4andZr3N4:A class of hard materials

4. Optical properties of cubic Ti3N4, Zr3N4, and Hf3N4

5. Theoretical prediction of the structural, elastic, electronic and optical properties of Zr3N4 and Hf3N4 compounds

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