High-Performance Thin-Film Transistors with Aqueous Solution-Processed NiInO Channel Layer
Author:
Affiliation:
1. Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Guangdong Province
Science and Technology Foundation of Shenzhen
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00377
Reference47 articles.
1. Room-temperature ultraviolet-emitting In2O3 nanowires
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4. Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors
5. Facile and Environmentally Friendly Solution-Processed Aluminum Oxide Dielectric for Low-Temperature, High-Performance Oxide Thin-Film Transistors
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