High-Performance Thin-Film Transistors with Aqueous Solution-Processed NiInO Channel Layer-Reference-Cited by-同舟云学术

High-Performance Thin-Film Transistors with Aqueous Solution-Processed NiInO Channel Layer

Published:2019-08-14 Issue:9 Volume:1 Page:1842-1851
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Li Yujia¹,Xu Wangying¹^ORCID,Liu Wenjun¹,Han Shun¹,Cao Peijiang¹^ORCID,Fang Ming¹,Zhu Deliang¹,Lu Youming¹

Affiliation:

1. Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Science and Technology Foundation of Shenzhen

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00377

Reference47 articles.

1. Room-temperature ultraviolet-emitting In2O3 nanowires

2. Material characteristics and applications of transparent amorphous oxide semiconductors

3. Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

4. Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors

5. Facile and Environmentally Friendly Solution-Processed Aluminum Oxide Dielectric for Low-Temperature, High-Performance Oxide Thin-Film Transistors

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