Structural, Optical, and Electrical Properties of InO<sub><i>x</i></sub> Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Flexible Device Applications-Reference-Cited by-同舟云学术

Structural, Optical, and Electrical Properties of InO_x Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Flexible Device Applications

Published:2022-05-27 Issue:6 Volume:4 Page:3010-3017
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Hong TaeHyun¹,Kim KyoungRok¹,Choi Su-Hwan²^ORCID,Lee Seung-Hwan¹^ORCID,Han Ki-Lim¹,Lim Jun Hyung³,Park Jin-Seong¹²^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

2. Division of Nanoscale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

3. R&D Center, Samsung Display, Yongin 17113, Republic of Korea

Funder

Hanyang University

Samsung Display OLED Center Program

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00434

Reference37 articles.

1. Repeatedly foldable AMOLED display

2. Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

3. Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

4. High-Performance ALD Al-Doped ZnO Thin-Film Transistors Grown on Flexible Substrates

5. A High-Gain Inverter With Low-Temperature Poly-Si Oxide Thin-Film Transistors

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