Enhanced Intrinsic Electrical Properties in Twisted Tellurium Nanowires-Reference-Cited by-同舟云学术

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Enhanced Intrinsic Electrical Properties in Twisted Tellurium Nanowires

Published:2024-08-15 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Liu Hao¹,Zhu Hongliang²,Chen Liping²,Shen Yunkun³,Wang Kaili¹,Jin Zhihan¹,Tan Chee Leong¹,Shi Yi⁴^ORCID,Yan Shancheng¹^ORCID

Affiliation:

1. School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

2. School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

3. College of Automation & College of Artificial Intelligence, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

4. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Funder

National Key Research and Development Program of China

Excellent Youth Foundation of Jiangsu Scientific Committee

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00866

Reference33 articles.

1. Strain Engineering of Twisted Bilayer Graphene: The Rise of Strain‐Twistronics

2. ARPES Signatures of Few-Layer Twistronic Graphenes

3. Robust Weak Antilocalization Effect Up to ∼120 K in the van der Waals Crystal Fe_5–xGeTe₂ with Near-Room-Temperature Ferromagnetism

4. Phonon-assisted upconversion in twisted two-dimensional semiconductors

5. Moiré Superlattice Structure in Two‐Dimensional Catalysts: Synthesis, Property and Activity

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