Thickness Optimization toward High-Performance Bottom-Gated Transparent Tin Dioxide Thin-Film Transistors-Reference-Cited by-同舟云学术

Thickness Optimization toward High-Performance Bottom-Gated Transparent Tin Dioxide Thin-Film Transistors

Published:2020-10-09 Issue:10 Volume:2 Page:3454-3458
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Liang Dou-Dou¹^ORCID,Chen Binjie²,Cho Hai Jun³^ORCID,Ohta Hiromichi³^ORCID

Affiliation:

1. The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

2. Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan

3. Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Nippon Sheet Glass Foundation for Materials Science and Engineering

Japan Society for the Promotion of Science

China Scholarship Council

Network Joint Research Center for Materials and Devices

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00711

Reference20 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

3. Material characteristics and applications of transparent amorphous oxide semiconductors

4. How we made the IGZO transistor

5. Fully Transparent Thin-Film Transistor Devices Based on SnO2 Nanowires

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal oxide ion gated transistors based sensors;Science China Technological Sciences;2024-03-22

2. High-mobility rutile SnO2 epitaxial films grown on (1−100) α-Al2O3;Journal of the Ceramic Society of Japan;2023-10-01

3. Amorphous oxide semiconductors: From fundamental properties to practical applications;Current Opinion in Solid State and Materials Science;2023-08

4. Orthorhombic distortion-induced anatase-like optoelectronic properties of rutile TiO₂;Journal of Applied Physics;2022-11-14

5. Combustion-assisted low-temperature solution process for high-performance SnO2 thin-film transistors;Ceramics International;2022-07