Postannealed (GaIn)<sub>2</sub>O<sub>3</sub> Films Deposited by Sputtering for Ultraviolet Photodetection-Reference-Cited by-同舟云学术

Postannealed (GaIn)₂O₃ Films Deposited by Sputtering for Ultraviolet Photodetection

Published:2022-09-14 Issue:9 Volume:4 Page:4455-4462
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Zhang Fabi¹^ORCID,He Tingbo¹,Zhou Juan¹,Hu Haizheng²,Guo Daoyou²^ORCID,Li Haiou¹^ORCID,Liu Xinpeng¹,Wangyang Peihua¹,Sun Tangyou¹^ORCID

Affiliation:

1. Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China

2. Center for Optoelectronics Materials and Devices & Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

Funder

Guangxi Overseas High-level Talent ???Hundred People Program???

Guangxi Provincial Key Laboratory of Precision Navigation Technology and Application, Guilin University of Technology

National Natural Science Foundation of China

Scientific Research and Technology Development Program of Guangxi

Thousands of Key Teacher Training Projects of GED

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00704

Reference29 articles.

1. Amorphous Indium–Gallium–Oxide UV Photodetectors

2. The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors

3. Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon

4. Amorphous Indium–Gallium–Oxide UV Photodetectors

5. High-responsivity (In0.26Ga0.74)2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition

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