Local Surface Plasmon Enhancement of (GaIn)<sub>2</sub>O<sub>3</sub> Based Ultraviolet Photodetector-Reference-Cited by-同舟云学术

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Local Surface Plasmon Enhancement of (GaIn)₂O₃ Based Ultraviolet Photodetector

Published:2023-11-10 Issue: Volume: Page:1-3
ISSN:
Container-title:2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC)
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Author:

Zhang Fabi¹,Weng Chenghao¹,Li Haiou¹,Liu Xinpeng¹,Sun Tangyou¹

Affiliation:

1. Guilin University of Electronic Technology,Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin,China,541004

Funder

National Natural Science Foundation of China

Guangxi Natural Science Foundation

Yunnan Province Major Science and Technology Projects

GUET

Innovation and Entrepreneurship Training Program

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10426787/10426807/10427250.pdf?arnumber=10427250

Reference13 articles.

1. Solar-blind UV detectors based on wide band gap semiconductors

2. Graphene-β -Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application

3. (In _x Ga ₁₋ _x ) ₂ O ₃ Thin Film Based Solar‐Blind Deep UV Photodetectors with Ultra‐High Detectivity and On/Off Current Ratio

4. Review of Ga2O3-based optoelectronic devices

5. Optical Properties of Indium Oxide

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