Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage VTH-Reference-Cited by-同舟云学术

Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage VTH

Published:2021-02-17 Issue:3 Volume:3 Page:1170-1177
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Vauche Laura¹^ORCID,Chanuel Antoine¹,Martinez Eugénie¹,Roure Marie-Christine¹,Le Royer Cyrille¹,Bécu Stéphane¹,Gwoziecki Romain¹,Plissonnier Marc¹

Affiliation:

1. CEA, LETI, Univ. Grenoble Alpes, F-38000 Grenoble, France

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c01023

Reference38 articles.

1. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

2. Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process

3. The 2018 GaN power electronics roadmap

4. Electronic surface and dielectric interface states on GaN and AlGaN

5. Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors

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