Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage VTH
Author:
Affiliation:
1. CEA, LETI, Univ. Grenoble Alpes, F-38000 Grenoble, France
Funder
Agence Nationale de la Recherche
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c01023
Reference38 articles.
1. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
2. Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process
3. The 2018 GaN power electronics roadmap
4. Electronic surface and dielectric interface states on GaN and AlGaN
5. Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors
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