Unconventional Seedless Multilayers with Large Perpendicular Anisotropy for Back-End-of-Line Compatible Spintronic Devices-Reference-Cited by-同舟云学术

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Unconventional Seedless Multilayers with Large Perpendicular Anisotropy for Back-End-of-Line Compatible Spintronic Devices

Published:2021-11-04 Issue:11 Volume:3 Page:4774-4780
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chatterjee Jyotirmoy¹^ORCID,Coelho Paulo¹,Chavent Antoine¹,Sousa Ricardo C.¹^ORCID,Auffret Stéphane¹,Baraduc Claire¹,Prejbeanu Ioan-Lucian¹,Dieny Bernard¹

Affiliation:

1. SPINTEC, Univ. Grenoble Alpes/CEA/CNRS, Grenoble 38000, France

Funder

Agence Nationale de la Recherche

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00578

Reference27 articles.

1. Magnetoresistive Random Access Memory

2. Ultralow-Voltage Spin-Transfer Switching in Perpendicularly Magnetized Magnetic Tunnel Junctions with Synthetic Antiferromagnetic Reference Layer

3. Physicochemical origin of improvement of magnetic and transport properties of STT-MRAM cells using tungsten on FeCoB storage layer

4. Seed Layer Effect on the Magnetic Properties of Ultrathin Co/Pt Multilayers With Perpendicular Magnetic Anisotropy

5. Theory of Spin Torque Switching Current for the Double Magnetic Tunnel Junction

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