Demonstration of Efficient Semipolar 410 nm Violet Laser Diodes Heteroepitaxially Grown on High-Quality Low-Cost GaN/Sapphire Substrates-Reference-Cited by-同舟云学术

Demonstration of Efficient Semipolar 410 nm Violet Laser Diodes Heteroepitaxially Grown on High-Quality Low-Cost GaN/Sapphire Substrates

Author:

Li Hongjian¹^ORCID,Li Panpan¹,Zhang Haojun²^ORCID,Nakamura Shuji¹²,DenBaars Steven P.¹²

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, United States

2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, United States

Funder

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

University of California, Santa Barbara

Collaborative Research in Engineering, Science and Technology Centre

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

Reference31 articles.

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