Insertion Trade-off Effects on the Spin-Transfer Torque Memory Explored by In Situ X-ray-Reference-Cited by-同舟云学术

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Insertion Trade-off Effects on the Spin-Transfer Torque Memory Explored by In Situ X-ray

Published:2021-08-23 Issue:9 Volume:3 Page:4047-4055
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ramesh Akhil K.¹²^ORCID,Chen Kuan-Ming¹,Lin Yi-Jan¹,Singh Pushpapraj²,Wei Jeng-Hua³,Hsin Yu-Chen³,Wu Chih-I³,Tseng Yuan-Chieh¹^ORCID

Affiliation:

1. Department of Materials Science & Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

2. Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi 110016, India

3. Industrial Technology Research Institute, Hsinchu 30010, Taiwan

Funder

Ministry of Education

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00554

Reference49 articles.

1. Voltage-Assisted Magnetic Switching in MgO/CoFeB-Based Magnetic Tunnel Junctions by Way of Interface Reconstruction

2. Enhanced Broad-band Radio Frequency Detection in Nanoscale Magnetic Tunnel Junction by Interface Engineering

3. Skyrmion-Mediated Voltage-Controlled Switching of Ferromagnets for Reliable and Energy-Efficient Two-Terminal Memory

4. Nonvolatile Multistates Memories for High-Density Data Storage

5. Ru Catalyst-Induced Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta/MgO Multilayered Films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Biological sensing using anomalous hall effect devices;Nanotechnology;2022-05-25

2. Interface imperfection effects on spin transfer torque switching: an atomistic approach;Journal of Physics D: Applied Physics;2022-02-28

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