Optical Second-Harmonic Polarimetry on Hf0.5Zr0.5O2/La0.67Sr0.33MnO3 Interfaces-Reference-Cited by-同舟云学术

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Optical Second-Harmonic Polarimetry on Hf_0.5Zr_0.5O₂/La_0.67Sr_0.33MnO₃ Interfaces

Published:2022-04-14 Issue:4 Volume:4 Page:2040-2046
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yu Qiucheng¹^ORCID,Kumar Rohit¹,Kumar Deepak²,Sambri Alessia²^ORCID,Miletto Granozio Fabio²^ORCID,Fina Ignasi³^ORCID,Sánchez Florencio³^ORCID,Paparo Domenico⁴^ORCID,Rubano Andrea¹^ORCID

Affiliation:

1. Dipartimento di Fisica “E. Pancini”, Università Federico II, Monte S. Angelo, Via Cinthia, 80126 Napoli, Italy

2. CNR-SPIN, Complesso Universitario di Monte S. Angelo, Via Cinthia, 80126 Napoli, Italy

3. Institut de Ciència de Materials de Barcelona ICMAB - CSIC, Campus UAB, Bellaterra 08193, Barcelona, Spain

4. CNR-ISASI, Via Campi Flegrei 34, 80078 Pozzuoli NA, Italy

Funder

Ministero dell?Istruzione, dell?Universit? e della Ricerca

Ministerio de Ciencia e Innovaci?n

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00197

Reference35 articles.

1. Ferroelectricity in hafnium oxide thin films

2. High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

3. Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film

4. Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions

5. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

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