Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions-Reference-Cited by-同舟云学术

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Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions

Published:2021-08-12 Issue:8 Volume:3 Page:3657-3666
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Cervo Sulzbach Milena¹^ORCID,Tan Huan¹,Estandía Saúl¹,Gàzquez Jaume¹,Sánchez Florencio¹^ORCID,Fina Ignasi¹^ORCID,Fontcuberta Josep¹

Affiliation:

1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, Catalonia 08193, Spain

Funder

Fundaci??n BBVA

European Commission

Ministerio de Ciencia e Innovaci??n

European Regional Development Fund

???la Caixa??? Foundation

Generalitat de Catalunya

China Scholarship Council

European Social Fund

AEI/FEDER, EU

Ram??n y Cajal

Severo Ochoa FUNFUTURE

Ministerio de Econom??a y Competitividad, ESF

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00604

Reference70 articles.

1. Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations

2. Memory technology—a primer for material scientists

3. Giant tunnel electroresistance for non-destructive readout of ferroelectric states

4. Room-Temperature Ferroelectric Resistive Switching in Ultrathin Pb(Zr0.2Ti0.8)O3 Films

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4. Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches;ACS Applied Electronic Materials;2024-08-16

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