Ohmic MXene Contacts for Symmetric p- and n-type Monolayer WSe2 Schottky Barrier Field-Effect Transistors

Author:

Li Hong1ORCID,Yuan Xinqi1,Li Jingzhen2,An Kang1,Liu Fengbin1,Sun Shuai1,Lu Jing345

Affiliation:

1. College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China

2. College of Microelectronics and Key Laboratory of Optoelectronics Technology, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China

3. State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China

4. Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

5. Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, P. R. China

Funder

Ministry of Science and Technology of the People's Republic of China

Beijing Municipal Natural Science Foundation

National Natural Science Foundation of China

North China University of Technology

Institute for Material Research

State Key Laboratory of Artificial Microstructure and Mesoscopic Physics

Publisher

American Chemical Society (ACS)

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