Tapping the Performance of a Tungsten Disulfide Field-Effect Transistor with Deep Structure Optimization and Theoretical Simulation-Reference-Cited by-同舟云学术

Tapping the Performance of a Tungsten Disulfide Field-Effect Transistor with Deep Structure Optimization and Theoretical Simulation

Published:2023-06-03 Issue:6 Volume:5 Page:3384-3393
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Zhang Yichao¹,Zhao Fulai¹^ORCID,Wang Yu¹,Wang Yaling¹,Feng Yiyu¹²^ORCID,Feng Wei¹²^ORCID

Affiliation:

1. School of Materials Science and Engineering, Tianjin University, Tianjin Key, Laboratory of Composite and Functional Materials, Tianjin 300072, P. R. China

2. Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, Tianjin 300072, P. R. China

Funder

China Association for Science and Technology

Ministry of Science and Technology of the People's Republic of China

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00397

Reference49 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2 Synthesized by Chemical Vapor Deposition

3. Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition

4. Basic Logic Operations Achieved in a Single 2D WSe2 Transistor by Surface-Charge-Transfer Doping

5. Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

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