Affiliation:
1. CNR‐IPCF Consiglio Nazionale delle Ricerche via G. Moruzzi 1 Pisa 56124 Italy
2. CNR‐ICCOM Consiglio Nazionale delle Ricerche via G. Moruzzi 1 Pisa 56124 Italy
Abstract
AbstractA chlorine‐doped ultrathin phase of hafnium disulfide (HfS2) is proposed as an ideal candidate material for 2D field‐effect transistor (FET) device applications, down to the extreme sub‐5 nm miniaturization limit. This transition metal dichalcogenide 2D material is designed to combine features of both a metal and a semiconductor, exhibiting a high electric conductivity comparable with ordinary metals, that can be abruptly cut down via gating due to an energy gap immediately below the Fermi level and its anomalous metallic properties. These unique features enable realizing an alternative design of a FET device in which electrode and channel are made of the same Cl‐doped ML HfS2 phase, a potential breakthrough bypassing all issues associated with electronic (Schottky) and structural dis‐homogeneities or low conductivity that have hindered progress in this field. This material/design combination shall lead to a FET device with purely ohmic behavior, high metallic conductance, no interfacial contact resistance, and facile gating with extremely high on/off ratio.
Funder
H2020 Future and Emerging Technologies
Subject
Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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