Transport Properties of a Molybdenum Disulfide and Carbon Dot Nanohybrid Transistor and Its Applications as a Hg2+ Aptasensor-Reference-Cited by-同舟云学术

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Transport Properties of a Molybdenum Disulfide and Carbon Dot Nanohybrid Transistor and Its Applications as a Hg2+ Aptasensor

Published:2020-02-02 Issue:3 Volume:2 Page:635-645
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Mansouri Majd Samira¹²,Ghasemi Foad³,Salimi Abdollah¹⁴²^ORCID,Sham Tsun-Kong⁴^ORCID

Affiliation:

1. Department of Chemistry, University of Kurdistan, Sanandaj, Iran 66177-15175

2. Research Center for Nanotechnology, University of Kurdistan, Sanandaj, Iran 66177-15175

3. Nanoscale Physics Device Lab (NPDL), Department of Physics, University of Kurdistan, Sanandaj, Iran 66177-15275

4. University of Western Ontario, London, Ontario N6A 5B7, Canada

Funder

Research Council, University of Kurdistan

Iranian Nanotechnology Initiative

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00632

Reference65 articles.

1. Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics

2. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

3. Single-layer MoS2 transistors

4. 2D MoS2–carbon quantum dot hybrid based large area, flexible UV–vis–NIR photodetector on paper substrate

5. Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

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