Fabrication and Characterization of Printed Phototransistors Based on Monochalcogenide Inks
Author:
Affiliation:
1. Department of Electrical and Electronics Engineering, Bursa Uludag University, 16120 Bursa, Türkiye
2. Silicon Austria Labs GmbH, 9524 Villach, Austria
3. National Nanotechnology Research Center─UNAM, Bilkent University, 06800 Ankara, Türkiye
Funder
Steirische Wirtschaftsf?rderungsgesellschaft
Silicon Austria Labs
T?rkiye Bilimsel ve Teknolojik Arastirma Kurumu
Amt der K?rntner Landesregierung
Upper Austrian Research
Fachverband der Elektro- und Elektronikindustrie
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01577
Reference32 articles.
1. Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse
2. Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates
3. High-Temperature Performance of a GaSe Nanosheet-Based Broadband Photodetector
4. Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint
5. Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide
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