Identification of shallow trap centers in InSe single crystals and investigation of their distribution: A thermally stimulated current spectroscopy-Reference-Cited by-同舟云学术

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Identification of shallow trap centers in InSe single crystals and investigation of their distribution: A thermally stimulated current spectroscopy

Published:2024-10 Issue: Volume:156 Page:116011
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Isik M.^ORCID,Gasanly N.M.

Publisher

Elsevier BV

Reference29 articles.

1. Fabrication and characterization of printed phototransistors based on monochalcogenide inks;Odaci;ACS Appl. Electron. Mater.,2023

2. In-plane optical and electrical anisotropy in low-symmetry layered GeS microribbons;Chen;NPG Asia Mater.,2022

3. Tuning electronic properties of Z-scheme InSe/HfS2 heterostructure by external electric field and biaxial strain;Luan;Mater. Sci. Semicond. Process.,2023

4. Outstanding intrinsic carrier mobility and transport properties of environmentally stable MX (M=Ga, In; X= S, Se, Te) atomic nanowires;Kumar;Physica B,2023

5. Electronic and optical properties of monolayer InSe quantum dots;Wang;Semicond. Sci. Technol.,2021

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