Low Drift Reference-less ISFET Comprising Two Graphene Films with Different Engineered Sensitivities
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 Singapore
Funder
Ministry of Education - Singapore
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c01066
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4. Jamasb, S.; Collins, S. D.; Smith, R. L. In A Physically-based Model for Drift in Al2O3-gate pH ISFET’s, Proceedings of International Solid-State Sensors and Actuators Conference (Transducers’97) 1997; Vol. 2, pp 1379–1382.
5. A physical model for threshold voltage instability in Si/sub 3/N/sub 4/-gate H/sup +/-sensitive FET's (pH ISFET's)
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