Design of Mixed-Dimensional QDs/MoS2/TiO2 Heterostructured Resistive Random-Access Memory with Interfacial Analog Switching Characteristics for Potential Neuromorphic Computing

Author:

Tang Shin-Yi1234,Shih Yu-Chuan124,Shen Ying-Chun124,Cyu Ruei-Hong124,Chen Chieh-Ting124,Yang Tzu-Yi124,Chaudhary Mayur124,Peng Yu-Ren1254,Kuo Yao-Ren124,Miao Wen-Chien36,Yu Yi-Jen7,Lee Ling124,Kuo Hao-Chung38,Chueh Yu-Lun1249ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

2. College of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan

3. Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan

4. Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

5. Ph. D. Program in Prospective Functional Materials Industry, National Tsing Hua University, Hsinchu 30013, Taiwan

6. Department of Electrophysics, College of Science, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

7. Instrument Center, National Tsing Hua University, Hsinchu 30013, Taiwan

8. Department of Photonics, Institute of Electro-Optical Engineering, National Yang-Ming Chiao Tung University, Hsinchu 30010, Taiwan

9. Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea

Funder

National Science and Technology Council

Publisher

American Chemical Society (ACS)

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