Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency-Reference-Cited by-同舟云学术

Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency

Published:2020-07-24 Issue:8 Volume:2 Page:2390-2397
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kim Donguk¹²,Jang Jun Tae¹²³,Yu Eunseon⁴,Park Jingyu¹²,Min Jungi¹²,Kim Dong Myong¹²,Choi Sung-Jin¹²^ORCID,Mo Hyun-Sun¹²,Cho Seongjae⁵³^ORCID,Roy Kaushik⁴,Kim Dae Hwan¹²^ORCID

Affiliation:

1. Department of Electronics Engineering, Kookmin University, 77 Jeongneung-ro, Seongbuk-gu, Seoul 02707, Republic of Korea

2. Hybrid Device-Based Circadian ICT Research Center, Kookmin University, 77 Jeongneung-ro, Seongbuk-gu, Seoul 02707, Republic of Korea

3. New Technology Component and Material Research Center (NCMRC), Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Republic of Korea

4. Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States

5. Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Republic of Korea

Funder

National Research Foundation of Korea

Korean Government

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00341

Reference49 articles.