Formation Mechanism of InP Films by Phosphidation under Controlled Chemical Potential and Wetting Behavior-Reference-Cited by-同舟云学术

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Formation Mechanism of InP Films by Phosphidation under Controlled Chemical Potential and Wetting Behavior

Published:2019-06-02 Issue:6 Volume:1 Page:877-882
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Katsube Ryoji¹^ORCID,Yang Yuming¹,Nakatsuka Shigeru¹^ORCID,Nose Yoshitaro¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan

Funder

Core Research for Evolutional Science and Technology

Mitsubishi Foundation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00084

Reference26 articles.

1. Strong Internal and External Luminescence as Solar Cells Approach the Shockley–Queisser Limit

2. Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures

3. High efficiency GaAs thin film solar cells by peeled film technology

4. Thin-film GaAs epitaxial lift-off solar cells for space applications

5. Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate

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1. Experimental Establishment of Phase Diagrams Guided by Uncertainty Sampling: An Application to the Deposition of Zn–Sn–P Films by Molecular Beam Epitaxy;ACS Materials Letters;2020-04-24

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