Interfacial-Mixing and Band Engineering Induced by Annealing of CdS and a-Ga2O3 n–n-Type Thin-Film Heterojunction and Its Impact on Carrier Dynamics for High-Performance Solar-Blind Photodetection

Author:

Kaur Damanpreet1ORCID,Wadhwa Riya1ORCID,Nisika 1,Zhang Yuchen2,Kaswekar Poojan Indrajeet2,Qiao Quinn2ORCID,Sharma Anju3,Poliks Mark D.4ORCID,Kumar Mukesh1ORCID

Affiliation:

1. Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001, India

2. Department of Mechanical and Aerospace Engineering, Syracuse University, Syracuse, New York 13244, United States

3. Small Scale Systems Integration and Packaging (S3IP) Center, Binghamton University, State University of New York, Binghamton, New York 13902, United States

4. Binghamton University, State University of New York, Binghamton, New York 13902, United States

Funder

Indian Institute of Technology Ropar

Defence Research and Development Organisation

Syracuse University

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

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