Penta-SiCN: A Highly Auxetic Monolayer-Reference-Cited by-同舟云学术

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Penta-SiCN: A Highly Auxetic Monolayer

Published:2022-04-19 Issue:5 Volume:4 Page:2561-2569
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Sharma Shambhu Bhandari¹^ORCID,Qattan Issam A.¹,Jaishi Meghnath²,Paudyal Durga³

Affiliation:

1. Khalifa University of Science and Technology, Department of Physics, P.O. Box 127788, Abu Dhabi, United Arab Emirates

2. Mechanical Engineering Department, University of Louisville, Louisville, Kentucky 40292, United States

3. Ames Laboratory, Iowa State University, Ames, Iowa 50011, United States

Funder

Khalifa University of Science, Technology and Research

Iowa State University

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00265

Reference62 articles.

1. Penta-graphene: A new carbon allotrope

2. Si Nanoribbons on Ag(110) Studied by Grazing-Incidence X-Ray Diffraction, Scanning Tunneling Microscopy, and Density-Functional Theory: Evidence of a Pentamer Chain Structure

3. The Pentagonal Nature of Self-Assembled Silicon Chains and Magic Clusters on Ag(110)

4. Unveiling the pentagonal nature of perfectly aligned single-and double-strand Si nano-ribbons on Ag(110)

5. High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

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1. Prediction of a rippled and auxetic two-dimensional Sn9C15 layers with tunable electronic band structure: A first-principle study;Materials Today Communications;2024-08

2. Unveiling reversible hydrogen storage mechanism for the 2D penta-SiCN material;International Journal of Hydrogen Energy;2024-08

3. Pristine and defective 2D SiCN substrates as anode materials for sodium-ion batteries;Journal of Energy Storage;2024-07

4. New 2D penta-SiPN: A wide and indirect bandgap semiconductor;Journal of Physics: Conference Series;2024-04-01

5. Analysis of the structural, electronic, optical and mechanical properties of CsGeI2Br under tensile and compressive strain for optoelectronic applications: A DFT computational perspective;Micro and Nanostructures;2024-02

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