High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics-Reference-Cited by-同舟云学术

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

Published:2017-04-03 Issue:21 Volume:29 Page:1602969
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Chow Wai Leong¹²,Yu Peng³,Liu Fucai³,Hong Jinhua⁴,Wang Xingli¹²⁴,Zeng Qingsheng³,Hsu Chuang-Han⁵,Zhu Chao³,Zhou Jiadong⁴,Wang Xiaowei⁴,Xia Juan⁶,Yan Jiaxu⁶,Chen Yu⁶,Wu Di⁵,Yu Ting⁶,Shen Zexiang²⁶,Lin Hsin⁵,Jin Chuanhong⁴,Tay Beng Kang¹²,Liu Zheng²³

Affiliation:

1. Centre for Micro-/Nano-electronics (NOVITAS); School of Electrical and Electronic Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore

2. CINTRA UMI CNRS/NTU/THALES; Singapore 637553 Singapore

3. Centre for Programmed Materials; School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore

4. State Key Laboratory of Silicon Materials; School of Materials Science and Engineering; Zhejiang University; Hangzhou Zhejiang 310027 P. R. China

5. Department of Physics; National University of Singapore; Singapore 117542 Singapore

6. School of Physical and Mathematical Sciences; Nanyang Technological University; 21 Nanyang Link Singapore 639798 Singapore

Funder

NTU-A*STAR Silicon Technologies Centre of Excellence

National Research Foundation Singapore

Nanyang Technological University

Ministry of Education Singapore

National Basic Research Program of China

National Natural Science Foundation of China

111 project

Publisher