Evolution of High Dielectric Permittivity in Low-Temperature Solution Combustion-Processed Phase-Pure High Entropy Oxide (CoMnNiFeCr)O for Thin Film Transistors-Reference-Cited by-同舟云学术

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Evolution of High Dielectric Permittivity in Low-Temperature Solution Combustion-Processed Phase-Pure High Entropy Oxide (CoMnNiFeCr)O for Thin Film Transistors

Published:2023-04-18 Issue:5 Volume:5 Page:2608-2623
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Salian Ashritha¹^ORCID,Pujar Pavan²^ORCID,Vardhan Robbi Vivek¹^ORCID,Cho Haewon²^ORCID,Kim Sunkook²^ORCID,Mandal Saumen¹^ORCID

Affiliation:

1. Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025, Mangalore, India

2. Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Gyeonggi-do, South Korea

Funder

Department of Science and Technology, Ministry of Science and Technology

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00094

Reference61 articles.

1. High dielectric constant oxides

2. Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits

3. High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

4. High dielectric constant gate oxides for metal oxide Si transistors

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1. Development of a novel (Mg0.25Co0.25Ni0.25Zn0.25)O medium entropy oxide for dielectric applications;Ceramics International;2024-09

2. Preparation and Characterization of BXFO High-Entropy Oxides;Magnetochemistry;2024-08-15

3. Overview of high-entropy oxide ceramics;Materials Today;2024-08

4. High Entropy Oxides: Mapping the Landscape from Fundamentals to Future Vistas;ACS Energy Letters;2024-07-05

5. Spin coating high‐k multicomponent (Al,Ti,V,Zr,Hf)O_x films with sub‐nm EOT for MOS‐based electronic devices;Journal of the American Ceramic Society;2024-05-24

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