Modulation of the Phase Transition Behavior of VO<sub>2</sub> Nanofilms by the Coupling of Zr Doping and Thickness-Dependent Band Gap-Reference-Cited by-同舟云学术

Modulation of the Phase Transition Behavior of VO₂ Nanofilms by the Coupling of Zr Doping and Thickness-Dependent Band Gap

Published:2022-11-22 Issue:12 Volume:4 Page:6067-6075
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Qin Shuzhi¹,Fan Yicheng¹,Qiu Xiang¹,Gou Guoqing¹^ORCID,Zhang Kun¹,Feng Qingguo¹,Gan Gongwen¹,Sun Wan¹

Affiliation:

1. Key Laboratory of Advanced Materials Technology Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, China

Funder

Sichuan Science and and Technology Program

Research and development project of electromagnetic ultrasonic welding residual stress testing equipment

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01202

Reference68 articles.

1. Measurement of a solid-state triple point at the metal–insulator transition in VO2

2. Phase change materials for smart textiles – An overview

3. Gas Sensor Based on Metal−Insulator Transition in VO2 Nanowire Thermistor

4. Combined Effect of Temperature Induced Strain and Oxygen Vacancy on Metal‐Insulator Transition of VO 2 Colloidal Particles

5. Enhanced Metal–Insulator Transition in Freestanding VO2 Down to 5 nm Thickness

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