Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance-Reference-Cited by-同舟云学术

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Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance

Published:2021-11-19 Issue:12 Volume:3 Page:5240-5247
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Jönsson Adam¹,Svensson Johannes¹,Fiordaliso Elisabetta Maria²,Lind Erik¹,Hellenbrand Markus³^ORCID,Wernersson Lars-Erik¹

Affiliation:

1. Department of Electrical and Information Technology, Lund University, Box 118, 221 00 Lund, Sweden

2. National Centre for Nano Fabrication and Characterization, Technical University of Denmark, Fysikvej 307 & 126, 2800 Kongens Lyngby, Denmark

3. Department of Material Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB3 0FS Cambridge, United Kingdom

Funder

Vetenskapsr??det

H2020 European Institute of Innovation and Technology

Stiftelsen f??r??Strategisk Forskning

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00729

Reference43 articles.

1. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

2. Towards high efficiency nanowire solar cells

3. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

4. Nanometre-scale electronics with III–V compound semiconductors

5. III–V Nanowire Complementary Metal–Oxide Semiconductor Transistors Monolithically Integrated on Si

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD;Journal of Alloys and Compounds;2024-06

2. Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product;ACS Photonics;2023-05-23

3. Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors;Advanced Functional Materials;2023-02-26

4. The role of the surface passivation in the mechanical properties of wurtzite InAs and InP nanowires: first-principles calculations;The European Physical Journal Plus;2022-10-07

5. The Short Channel and Quantum Confinement Effects on Transfer Characteristics of Si NWMOSFET Depending on the Gate Length and Temperature;Journal of the Institute of Science and Technology;2022-06-01

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