Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxide-Reference-Cited by-同舟云学术

Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxide

Published:2021-09-10 Issue:9 Volume:3 Page:4115-4120
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lederer Maximilian¹^ORCID,Bagul Pratik¹,Lehninger David¹,Mertens Konstantin¹,Reck André¹,Olivo Ricardo¹,Kämpfe Thomas¹^ORCID,Seidel Konrad¹,Eng Lukas M.²

Affiliation:

1. Fraunhofer IPMS, Center Nanoelectronic Technologies, An der Bartlake 5, 01109 Dresden, Germany

2. TU Dresden, Institute for Applied Physics, 01062 Dresden, Germany, and Center of Excellence - Complexity and Topology in Quantum Matter (ct.qmat), Technische Universität Dresden, 01062 Dresden, Germany

Funder

Bundesministerium f??r Wirtschaft und Energie

Freistaat Sachsen

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00590

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5. Jerry, M.; Chen, P.Y.; Zhang, J.; Sharma, P.; Ni, K.; Yu, S.; Datta, S. Ferroelectric FET Analog Synapse for Acceleration of Deep Neural Network Training, IEEE International Electron Devices Meeting, Piscataway, NJ, 2017; pp 6.2.1–6.2.4.

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