Broadband Dielectric Behavior of an MIL-100 Metal–Organic Framework as a Function of Structural Amorphization
Author:
Affiliation:
1. Multifunctional Materials and Composites (MMC) Laboratory, Department of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, U.K.
2. Diamond Light Source, Harwell Campus, Chilton, Oxford OX11 0DE, U.K.
Funder
Samsung
Engineering and Physical Sciences Research Council
Horizon 2020 Framework Programme
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c01045
Reference24 articles.
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2. Interconnect scaling-the real limiter to high performance ULSI
3. Low Dielectric Constant Sicoh Films As Potential Candidates for Interconnect Dielectrics
4. A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 μm/sup 2/ SRAM cell
5. Metal-organic frameworks as promising candidates for future ultralow-k dielectrics
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