Highly Sensitive Band Alignment of the Graphene/MoSi2N4 Heterojunction via an External Electric Field
Author:
Affiliation:
1. School of Science, Hubei University of Technology, Wuhan 430068, China
2. Hubei Engineering Technology Research Centre of Energy Photoelectric Device and System, Hubei University of Technology, Wuhan 430068, China
Funder
The Outstanding Young and Middle-aged Science and Technology Innovation Team of Colleges and Universities in Hubei Provence
The Outstanding Talent Foundation for Green Industry Leading Plan of HBUT
The Science and Technology Research Project of Education Department of Hubei Province
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00374
Reference68 articles.
1. The rise of graphene
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