Promising Photoelectronic Properties of Two-Dimensional MoSi2N4/WS2 Heterojunction: A First-Principles Study
Author:
Affiliation:
1. Hunan Key Laboratory for Micro−Nano Energy Materials and Devices, School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
Funder
Natural Science Foundation of Hunan Province
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00813
Reference46 articles.
1. Electric Field Effect in Atomically Thin Carbon Films
2. Stretching and Breaking of Ultrathin MoS2
3. Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2
4. Production of few-layer phosphorene by liquid exfoliation of black phosphorus
5. Two-dimensional magnetotransport in a black phosphorus naked quantum well
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