Position-Sensitive and High-Performance Photodetection Observed in Carbon NanoFilm Based on Silicon Carbide
Author:
Affiliation:
1. School of Science, North University of China, Xueyuan Road Third, Taiyuan, ShanXi 030051, China
Funder
Natural Science Foundation of Shanxi Province
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00416
Reference31 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature
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4. Silicon carbide and diamond for high temperature device applications
5. High power devices in wide bandgap semiconductors
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