Analysis of the Solution-Processed a-SnOX and HfO2 Interface for Applications in Thin-Film Transistors-Reference-Cited by-同舟云学术

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Analysis of the Solution-Processed a-SnOX and HfO2 Interface for Applications in Thin-Film Transistors

Published:2021-01-25 Issue:2 Volume:3 Page:651-657
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Avis Christophe¹^ORCID,Billah Mohammad Masum¹^ORCID,Kim Youn Goo¹,Siddik Abu Bakar¹,Jang Jin¹^ORCID

Affiliation:

1. Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 02447, Korea

Funder

National Research Foundation of Korea

Korea Display Research Corporation

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00732

Reference35 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Review of recent advances in flexible oxide semiconductor thin-film transistors

3. Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

4. Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature

5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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1. Metal oxide ion gated transistors based sensors;Science China Technological Sciences;2024-03-22

2. Microstructure, dielectric and optical properties of transparent flexible high-k Bi1.5MgNb1.5O7 thin films;Ceramics International;2024-03

3. Light Effect on Amorphous Tin Oxide Thin‐Film Transistors;Advanced Photonics Research;2024-01-26

4. Dual Role of AgNO₃ as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-Film Transistors;ACS Applied Electronic Materials;2024-01-09

5. Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors;Materials;2023-11-15

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