Mid-IR-Sensitive n/p-Junction Fabricated on p-Type Si Surface via Ultrashort Pulse Laser n-Type Hyperdoping and High-Temperature Annealing-Reference-Cited by-同舟云学术

Mid-IR-Sensitive n/p-Junction Fabricated on p-Type Si Surface via Ultrashort Pulse Laser n-Type Hyperdoping and High-Temperature Annealing

Published:2021-01-18 Issue:2 Volume:3 Page:769-777
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kudryashov Sergey¹²^ORCID,Nastulyavichus Alena¹,Kirilenko Demid²³,Brunkov Pavel²³,Shakhmin Alexander⁴,Rudenko Andrey¹,Melnik Nikolay¹,Khmelnitskii Roman¹,Martovitskii Victor¹,Uspenskaya Mayya²,Prikhodko Dmitry⁵⁶,Tarelkin Sergey⁵⁷⁸,Galkin Artem⁵,Drozdova Taisia⁵,Ionin Andrey¹

Affiliation:

1. Lebedev Physical Institute, 119991 Moscow, Russia

2. ITMO University, 197101 St. Petersburg, Russia

3. Ioffe Institute, 194021 St. Petersburg, Russia

4. Peter the Great Politechnical University, 195251 St. Petersburg, Russia

5. Technological Institute for Superhard and Novel Carbon Materials, Troitsk, 108840 Moscow, Russia

6. Moscow Institute of Physics and Technology, Dolgoprudny, 141701 Moscow, Russia

7. National University of Science and Technology MISiS, 194017 Moscow, Russia

8. The All-Russian Research Institute for Optical and Physical Measurements, 119361 Moscow, Russia

Funder

Russian Foundation for Basic Research

Government of Russian Federation