Near-far IR photoconductivity damping in hyperdoped Si at low temperatures-Reference-Cited by-同舟云学术

Near-far IR photoconductivity damping in hyperdoped Si at low temperatures

Published:2021-10-20 Issue:11 Volume:11 Page:3792
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Kudryashov Sergey^ORCID,Boldyrev Kirill,Nastulyavichus Alena,Prikhod’ko Dmitry,Tarelkin Sergey,Kirilenko Demid,Brunkov Pavel,Shakhmin Alexander,Khamidullin Kamil,Krasin George^ORCID,Kovalev Michael^ORCID

Funder

Russian Foundation for Basic Research

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Tunnel field-effect transistors for sensitive terahertz detection

2. Photodetectors of 2D Materials from Ultraviolet to Terahertz Waves

3. Effects of annealing process on the structural and photodetection properties of new thin-film solar-blind UV sensor based on Si-photonics technology

4. Hyper-Doped Silicon Nanoantennas and Metasurfaces for Tunable Infrared Plasmonics

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