Radio-Frequency Characteristics of Ge-Doped Vanadium Dioxide Thin Films with Increased Transition Temperature-Reference-Cited by-同舟云学术

Radio-Frequency Characteristics of Ge-Doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Published:2020-04-16 Issue:5 Volume:2 Page:1263-1272
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Muller Andrei¹^ORCID,Khadar Riyaz A.²,Abel Tobias³⁴,Negm Nour³⁴,Rosca Teodor¹,Krammer Anna⁵,Cavalieri Matteo¹^ORCID,Schueler Andreas⁵,Qaderi Fatemeh¹,Bolten Jens³,Lemme Max³⁴^ORCID,Stolichnov Igor¹^ORCID,Ionescu Adrian M.¹

Affiliation:

1. Nanoelectronic Devices Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

2. Powerlab, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

3. AMO GmbH, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany

4. Chair of Electronic Devices, RWTH Aachen University, 52062 Aachen, Germany

5. Solar Energy and Building Physics Laboratory (LESO-PB), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland

Funder

H2020 Future and Emerging Technologies

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00078

Reference48 articles.

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4. Estes, N. J.; Chisum, D. Increased Power Handling of Vanadium Dioxide T/R Switches Using a Resonant Topology. IEEE MTT-S International Microwave Symposium, 2019; pp 669–672.

5. Radio-Frequency Switches: Fully Inkjet-Printed VO2 -Based Radio-Frequency Switches for Flexible Reconfigurable Components (Adv. Mater. Technol. 1/2019)

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