Phases in HfO2-Based Ferroelectric Thin Films and Their Integration in Low-Power Devices
Author:
Affiliation:
1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon16419, Republic of Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01513
Reference47 articles.
1. Negative capacitance to the rescue?
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4. A critical review of recent progress on negative capacitance field-effect transistors
5. HfO2-based ferroelectrics: From enhancing performance, material design, to applications
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