Bandwidth Limitation of Directly Contacted Graphene–Silicon Optoelectronics

Author:

Mao Dun1ORCID,Kananen Thomas1,Li Tiantian1,Soman Anishkumar1,Sinsky Jeffrey2,Petrone Nicholas3ORCID,Hone James3,Dong Po2,Gu Tingyi1ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, United States

2. Nokia Bell Laboratories, 791 Holmdel Road, Holmdel, New Jersey 07733, United States

3. Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States

Funder

U.S. Department of Defense

National Aeronautics and Space Administration

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Annealing coatings of graphene on silicon and application to tribology;Tribology International;2023-07

2. Space test of photonic integrated materials and devices;2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID);2021-08

3. Device Architectures for Low Voltage and Ultrafast Graphene Integrated Phase Modulators;IEEE Journal of Selected Topics in Quantum Electronics;2021-03

4. High open-circuit voltage Mos2 homojunction - effect of Schottky barriers at the contacts;2020 47th IEEE Photovoltaic Specialists Conference (PVSC);2020-06-14

5. Direct large-area growth of graphene on silicon for potential ultra-low-friction applications and silicon-based technologies;Nanotechnology;2020-06-08

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